• Estudos por espectroscopia Raman da heteroestrutura semicondutora InxGa1-xP/GaAs. 

      Morais, Rômulo Ronan Oliveira de (Universidade Federal de São Carlos, UFSCar, Programa de Pós-Graduação em Física - PPGF, , 24/03/2005)
      In this work, the technique Raman spectroscopy is used in order to study InxGa1-xP films grown with different thickness on GaAs (001). Two sets of samples grown by CBE (Chemical Beam Epitaxy) were analized: the first a ...