In this thesis, we have investigated the optical and transport properties of a p-i-n GaAs-AlAs resonant tunneling diode (RTD). The possibility of controlling and significantly varying the density of carriers accumulated ...

Resonant Tunneling Diodes (RTDs) are semiconductor devices usually composed of two barrier structures embedding a single quantum well (QW) and highly doped layers in its extremities. Under an applied bias voltage, the ...

In classical Physics, the motion of an electrically charged particle is affected only by the presence of a magnetic field if the particle enters a region of space in which the field is present. Meanwhile, in quantum Physics, ...

The aim of this work was to study the spin effects in non-magnetic asymmetric n-type resonant tunneling diodes (RTD). For this purpose, we have used transport and polarization resolved magneto-photoluminescence measurement ...

In this work, it was investigated the optical and magneto-optical properties of In- GaAsN/GaAs and InGaAs/GaAs double quantum wells. It was performed a systematic experimental study of photoluminescence (PL) as a function ...

In the present thesis, we realize a computational modeling of semiconductor structures based on multiple quantum wells with filter barriers and on quantum wells with semiconductor diluted magnetic layers. We numerically ...

In this work, we studied the influence of surface charges on the properties (especially electronic transport) of semiconductor nanowires and nanobelts via computer simulations and also they were compared to experimental ...

In this work it was investigated some fundamental properties of undoped and Borondoped (p-type) synthetic diamond films. It was investigated the influence of the cleaning process on the surface s quality in order to ...

In this work, we have studied GaAs/AlAs/Ga1-xMnxAs quantum wells (QWs) with low Mn concentration ( 0 < x < 0,2%). The samples were grown by Molecular Beam Epitaxy (MBE) in high temperature (450 C). The growth conditions ...

Defects play a fundamental issue on physical properties of wide bandgap semiconductors (WBS) due to the possibility of application in high temperature. This work shows the features of the defects in di erent kind of WBS ...