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Magneto luminescência em diodos de tunelamento ressonante contendo pontos quânticos de InAs
(Universidade Federal de São Carlos, 2011-03-15)
In this work, we have studied the spin polarization of carriers in n-type resonant tunneling diodes (RTDs) of GaAs/AlGaAs which incorporates a single layer of InAs selfassembled quantum dots in the center of the GaAs quantum ...
Estudo experimental de efeitos de spin em heteroestruturas semicondutoras
(Universidade Federal de São Carlos, 2015-04-28)
In this thesis, we have investigated optical and spin properties of semiconductor
nanostructures. Photoluminescence and magneto-photoluminescence measurements
were performed in high magnetic field (B ≤ 15T), in GaBiAs ...
Polarização de spin em heteroestruturas semicondutoras contendo pontos quânticos de InAs
(Universidade Federal de São Carlos, 2010-05-07)
In this work, we have studied spin polarization of carriers in a resonant tunneling diode GaAs/AlGaAs with InAs quantum dots in the center of the quantum well. We have observed that the photoluminescence of quantum dots ...
Efeitos de spin em diodos de tunelamento ressonante não-magnéticos tipo-n
(Universidade Federal de São Carlos, 2007-02-27)
In this work, we have investigated spin polarization effects in asymmetric ntype
resonant tunneling diodes (RTDs). When subjected to an external magnetic field parallel
to the tunnel current, the Zeeman effect leads to the ...
Manipulação de spin em diodos de tunelamento ressonante não-magnéticos tipo-n
(Universidade Federal de São Carlos, 2010-04-01)
The aim of this work was to study the spin effects in non-magnetic asymmetric n-type resonant tunneling diodes (RTD). For this purpose, we have used transport and polarization resolved magneto-photoluminescence measurement ...
Efeitos de spin em diodos de tunelamento ressonante tipo-p
(Universidade Federal de São Carlos, 2012-03-27)
In this work, we have investigated the spin effects in p-i-p GaAs/AlAs resonant tunneling diodes under magnetic field parallel to the tunnel current. The spin-dependent tunneling of carriers was studied by analyzing the ...