• Estudos por espectroscopia Raman da heteroestrutura semicondutora InxGa1-xP/GaAs. 

      Morais, Rômulo Ronan Oliveira de; http://lattes.cnpq.br/4990281576230103 (Universidade Federal de São CarlosBRUFSCarPrograma de Pós-graduação em Física, 2005-03-24)
      In this work, the technique Raman spectroscopy is used in order to study InxGa1-xP films grown with different thickness on GaAs (001). Two sets of samples grown by CBE (Chemical Beam Epitaxy) were analized: the first a ...
    • Interação plasmon-fônon LO em superredes semicondutoras 

      Rodrigues, Ariano de Giovanni; http://genos.cnpq.br:12010/dwlattes/owa/prc_imp_cv_int?f_cod=K4730641T8 (Universidade Federal de São CarlosBRUFSCarPrograma de Pós-graduação em Física, 2008-10-07)
      This work presents a Raman investigation of the optical vibrations in highly doped In-GaAs/InP and GaAs/AlGaAs superlattices (SL s). The InGaAs/InP SL s grown with different periods were analyzed using polarized Raman ...
    • Filmes de diamante não-dopados e dopados: um estudo sistemático usando espectroscopia Raman. 

      Silva, William Fortunato da; http://buscatextual.cnpq.br/buscatextual/visualizacv.do?id=K4795115A6&dataRevisao=null (Universidade Federal de São CarlosBRUFSCarPrograma de Pós-graduação em Física, 2004-11-17)
      Diamond films grown by both hot filament (HFCVD) and microwave-plasma (MW-CVD) assisted chemical vapor deposition were investigated. Raman spectroscopy, scan- ning electron microscopy and X-ray di¤raction were employed in ...