Browsing by Advisor "Galzerani, José Cláudio"

Now showing items 1-3 of 3

    • Estudos por espectroscopia Raman da heteroestrutura semicondutora InxGa1-xP/GaAs. 

      Morais, Rômulo Ronan Oliveira de (Universidade Federal de São Carlos, UFSCar, Programa de Pós-Graduação em Física - PPGF, , 24/03/2005)
      In this work, the technique Raman spectroscopy is used in order to study InxGa1-xP films grown with different thickness on GaAs (001). Two sets of samples grown by CBE (Chemical Beam Epitaxy) were analized: the first a ...

    • Interação plasmon-fônon LO em superredes semicondutoras 

      Rodrigues, Ariano de Giovanni (Universidade Federal de São Carlos, UFSCar, Programa de Pós-Graduação em Física - PPGF, , 07/10/2008)
      This work presents a Raman investigation of the optical vibrations in highly doped In-GaAs/InP and GaAs/AlGaAs superlattices (SL s). The InGaAs/InP SL s grown with different periods were analyzed using polarized Raman ...

    • Filmes de diamante não-dopados e dopados: um estudo sistemático usando espectroscopia Raman 

      Silva, William Fortunato da (Universidade Federal de São Carlos, UFSCar, Programa de Pós-Graduação em Física - PPGF, , 17/11/2004)
      Diamond films grown by both hot filament (HFCVD) and microwave-plasma (MW-CVD) assisted chemical vapor deposition were investigated. Raman spectroscopy, scan- ning electron microscopy and X-ray di¤raction were employed ...