Browsing by Advisor "Gobato, Yara Galvão"

Now showing items 1-14 of 14

    • Propriedades magneto-óticas e de magneto-transporte de um diodo de tunelamento ressonante contendo Si δ - doping no poço quântico 

      Herval, Leonilson Kiyoshi Sato de (Universidade Federal de São Carlos, UFSCar, Programa de Pós-Graduação em Física - PPGF, , 11/03/2011)
      In this work, we have studied the transport and optical properties of GaAs = AlGaAs resonant tunneling diodes with Si delta-doping at the center of the quantum well. We have studied magneto-transport and polarized resolved ...

    • Magneto luminescência em diodos de tunelamento ressonante contendo pontos quânticos de InAs 

      Nóbrega, Jaldair Araújo e (Universidade Federal de São Carlos, UFSCar, Programa de Pós-Graduação em Física - PPGF, , 15/03/2011)
      In this work, we have studied the spin polarization of carriers in n-type resonant tunneling diodes (RTDs) of GaAs/AlGaAs which incorporates a single layer of InAs selfassembled quantum dots in the center of the GaAs quantum ...

    • Caracterização ótica de poços quânticos de GaMnAs 

      Holgado, Danny Pilar Araucano (Universidade Federal de São Carlos, UFSCar, Programa de Pós-Graduação em Física - PPGF, , 12/09/2007)
      In this work, we have studied GaAs/AlAs/Ga1-xMnxAs quantum wells (QWs) with low Mn concentration ( 0 < x < 0,2%). The samples were grown by Molecular Beam Epitaxy (MBE) in high temperature (450 C). The growth conditions ...

    • Development of seminconductor nanowire materials for electronic and photonics applications 

      Piton, Marcelo Rizzo (Universidade Federal de São Carlos, UFSCar, Programa de Pós-Graduação em Física - PPGF, Câmpus São Carlos, 05/12/2019)
      The thesis is concerned with study of GaAs nanowires fabricated on Si substrate. The possibility of growing III-V semiconductor materials directly on silicon in the form of nanowires is an attractive route to the integration ...

    • Estudos de efeitos de spin em diodos de tunelamento ressonante do tipo-p 

      Bezerra, Anibal Thiago (Universidade Federal de São Carlos, UFSCar, Programa de Pós-Graduação em Física - PPGF, , 26/03/2010)
      The aim of this work was to complement the studies of the mechanisms of control of the degree of circular polarization of emission from resonant tunneling diodes p-type (RTD) by analyzing the optical properties and transport ...

    • Polarização de spin em heteroestruturas semicondutoras contendo pontos quânticos de InAs 

      Santos, Ednilson Carlos dos (Universidade Federal de São Carlos, UFSCar, Programa de Pós-Graduação em Física - PPGF, , 07/05/2010)
      In this work, we have studied spin polarization of carriers in a resonant tunneling diode GaAs/AlGaAs with InAs quantum dots in the center of the quantum well. We have observed that the photoluminescence of quantum dots ...

    • Estudo da dinâmica de portadores em diodos de tunelamento ressonante tipo-p 

      Galeti, Helder Vinicius Avanço (Universidade Federal de São Carlos, UFSCar, Programa de Pós-Graduação em Física - PPGF, , 27/02/2007)
      Photoluminescence spectroscopy has been used to provide important insight on the tunneling dynamics of carriers in double barrier diodes. In this work, we have performed time-resolved photoluminescence measurements in ...

    • Efeitos de spin em diodos de tunelamento ressonante não-magnéticos tipo-n 

      Santos, Lara Fernandes dos (Universidade Federal de São Carlos, UFSCar, Programa de Pós-Graduação em Física - PPGF, , 27/02/2007)
      In this work, we have investigated spin polarization effects in asymmetric ntype resonant tunneling diodes (RTDs). When subjected to an external magnetic field parallel to the tunnel current, the Zeeman effect leads to the ...

    • Estudos de vidros fluoroboratos e fluorogermanatos de chumbo, através de técnicas de espectroscopia óptica e de ressonância magnética 

      Carvajal Taborda, Eduar Enrique (Universidade Federal de São Carlos, UFSCar, Programa de Pós-Graduação em Física - PPGF, Câmpus São Carlos, 04/12/2018)
      In this work two studies on rare earth−doped (Eu3+, Yb3+) lead fluorogermanate (GeO2−PbO−PbF2) and fluoroborate glasses (B2O3 −PbO −PbF2) were investigated. The main advantages of these glasses are their chemical stability ...

    • Manipulação de spin em diodos de tunelamento ressonante não-magnéticos tipo-n 

      Santos, Lara Fernandes dos (Universidade Federal de São Carlos, UFSCar, Programa de Pós-Graduação em Física - PPGF, , 01/04/2010)
      The aim of this work was to study the spin effects in non-magnetic asymmetric n-type resonant tunneling diodes (RTD). For this purpose, we have used transport and polarization resolved magneto-photoluminescence measurement ...

    • Efeitos de spin em diodos de tunelamento ressonante tipo-p 

      Galeti, Helder Vinicius Avanço (Universidade Federal de São Carlos, UFSCar, Programa de Pós-Graduação em Física - PPGF, , 27/03/2012)
      In this work, we have investigated the spin effects in p-i-p GaAs/AlAs resonant tunneling diodes under magnetic field parallel to the tunnel current. The spin-dependent tunneling of carriers was studied by analyzing the ...

    • Caracterização das propriedades ópticas e de spin de poços quânticos de InGaAsN/GaAs 

      Ballottin, Mariana Victória (Universidade Federal de São Carlos, UFSCar, Programa de Pós-Graduação em Física - PPGF, , 30/03/2015)
      In this work, it was investigated the optical and magneto-optical properties of In- GaAsN/GaAs and InGaAs/GaAs double quantum wells. It was performed a systematic experimental study of photoluminescence (PL) as a function ...

    • Optical and transport properties of p-i-n GaAs/AlAs resonant tunneling diode 

      Awan, Iram Taj (Universidade Federal de São Carlos, UFSCar, Programa de Pós-Graduação em Física - PPGF, , 26/05/2014)
      In this thesis, we have investigated the optical and transport properties of a p-i-n GaAs-AlAs resonant tunneling diode (RTD). The possibility of controlling and significantly varying the density of carriers accumulated ...

    • Propriedades óticas e de transporte em heteroestruturas semicondutoras contendo GaMnAs 

      Rodrigues, Daniel Henrique (Universidade Federal de São Carlos, UFSCar, Programa de Pós-Graduação em Física - PPGF, , 14/10/2011)
      In this work, we have investigated Ga1-xMnxAs/GaAs/AlAs quantum wells (QWs) with low Mn concentration (x < 0.1%) grown by Molecular Beam Epitaxy at substrate temperatures of 400 and 450°C. We have investigated the time-resolved ...