Browsing by Subject "FET de um único nanofio de SnO2"
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A study of SnO2 nanowire FET devices: ambipolarity effect induced by UV Light exposure and their use as UV sensors
(Universidade Federal de São Carlos, UFSCar, Programa de Pós-Graduação em Física - PPGF, Câmpus São Carlos, 18/03/2021)In this work, SnO2 nanowires (NW) were grown by the Vapor-Liquid-Solid (VLS) method and used to build single NW FET devices. As-grown samples went through structural and morphological analysis and seven single NW devices ...