The present work aims the study of electronic, elastic and structural properties of a whole class of nanoscopic semiconductors systems, which include quasi-two-dimensional, one-dimensional and zero-dimensional confined ...

Resonant Tunneling Diodes (RTDs) are semiconductor devices usually composed of two barrier structures embedding a single quantum well (QW) and highly doped layers in its extremities. Under an applied bias voltage, the ...

Nowadays, several efforts have been made by research groups around the physical properties of the graphene in view of the possible technological applications of their unique structural and electronic properties. The ...

This thesis is aiming to study, according to a theoretical approaches, the electronic and optical properties of quasi-2D semiconductor quantum systems. Using the k · p model as basis we obtained a satisfactory set of results ...

In this work we studied the structural, optical and electronic transport properties of intrinsic and doped SnO2 nanowires with different concentrations of antimony (Sb) grown by the Vapor-Liquid-Solid mechanism (VLS). ...

Zinc phosphide Zn3P2 nanowires with excellent crystalline quality were grown using the Vapor-Liquid-Solid (VLS) method with gold nanoparticles as catalysts. Single nanowire based devices were fabricated with ohmic nickel ...

In this work we used as a starting point the theory developed by Zakharov and Nazarenko for treating wave turbulence in systems with weak non linearity such as atomic Bose-Einstein condensates with low enough temperature ...

In this work, conductivity in ferroelectric domain walls, in materials whose domains are insulating, was investigated at the nanoscale using a combination of techniques based on atomic force microscopy. Polycrystalline and ...

In the present work, the localization properties of the single-particle and collective excitations subjected to a random potential in the AlGaAsSi alloys and in the intentionally disordered GaAs/AlGaAs:Si superlattices (SL ...

In this work, a study of the Anderson model is done for the case of a quantum dot between two electron gases, single-electron transistor (SET), where a Coulombian repulsion term was added at the orbitals that are directly ...