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AuthorFraygola, Bárbara Maraston (2)Santos Filho, Marcos Alberto Gonçalves dos (2)Amorim, Rodrigo Garcia (1)... View MoreSubjectFísica da matéria condensada (8)Semicondutores (5)Semiconductors (3)... View MoreDate Issued2020 - 2022 (6)2010 - 2019 (15)2004 - 2009 (6)CNPq Subjects
CIENCIAS EXATAS E DA TERRA::FISICA::FISICA DA MATERIA CONDENSADA (27)
CIENCIAS EXATAS E DA TERRA::FISICA::FISICA DA MATERIA CONDENSADA::TRANSP.ELETRONICOS E PROP. ELETRICAS DE SUPERFICIES;INTERFACES E PELICULAS (4)CIENCIAS EXATAS E DA TERRA::FISICA (3)... View MoreGraduate ProgramPrograma de Pós-Graduação em Física - PPGF (27)Document TypeTese (20)Dissertação (7)

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Efeitos eletrônicos, elásticos e estruturais em sistemas semicondutores nanoscópicos 

Cesar, Daniel Ferreira (Universidade Federal de São Carlos, 2012-02-16)
The present work aims the study of electronic, elastic and structural properties of a whole class of nanoscopic semiconductors systems, which include quasi-two-dimensional, one-dimensional and zero-dimensional confined ...
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Contraste entre propriedades optoeletrônicas em estruturas de tunelamento ressonante n-i-n baseadas em GaAs 

Oliveira, Edson Rafael Cardozo de (Universidade Federal de São Carlos, 2019-05-15)
Resonant Tunneling Diodes (RTDs) are semiconductor devices usually composed of two barrier structures embedding a single quantum well (QW) and highly doped layers in its extremities. Under an applied bias voltage, the ...
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Tunelamento ressonante de férmions massivos de Dirac em sistemas de simples e dupla barreiras em monocamada de grafeno 

Teixeira, José Dilson da Silva (Universidade Federal de São Carlos, 2015-04-29)
Nowadays, several efforts have been made by research groups around the physical properties of the graphene in view of the possible technological applications of their unique structural and electronic properties. The ...
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Electronic and optical properties of Quasi-2D nanostructures and exfoliated systems 

Meneses Gustin, Diana Mercedes (Universidade Federal de São Carlos, 2017-10-30)
This thesis is aiming to study, according to a theoretical approaches, the electronic and optical properties of quasi-2D semiconductor quantum systems. Using the k · p model as basis we obtained a satisfactory set of results ...
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Transporte eletrônico em nanofios de SnO2 dopado com Sb: transição metal-isolante induzida pela dopagem e fotocondutividade persistente 

Costa, Ivani Meneses (Universidade Federal de São Carlos, 2019-03-15)
In this work we studied the structural, optical and electronic transport properties of intrinsic and doped SnO2 nanowires with different concentrations of antimony (Sb) grown by the Vapor-Liquid-Solid mechanism (VLS). ...
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Propriedades eletrônicas de nanofios semicondutores de Fosfeto de Zinco (Zn3P2) 

Lombardi, Gustavo Aparecido (Universidade Federal de São Carlos, 2018-04-20)
Zinc phosphide Zn3P2 nanowires with excellent crystalline quality were grown using the Vapor-Liquid-Solid (VLS) method with gold nanoparticles as catalysts. Single nanowire based devices were fabricated with ohmic nickel ...
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Turbulência de Ondas em condensados de Bose-Einstein 

Santos Filho, Marcos Alberto Gonçalves dos (Universidade Federal de São Carlos, 2018-02-19)
In this work we used as a starting point the theory developed by Zakharov and Nazarenko for treating wave turbulence in systems with weak non linearity such as atomic Bose-Einstein condensates with low enough temperature ...
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Visualização, caracterização e manipulação de paredes de domínios em filmes finos ferroelétricos 

Gonçalves, André Marino (Universidade Federal de São Carlos, 2017-08-10)
In this work, conductivity in ferroelectric domain walls, in materials whose domains are insulating, was investigated at the nanoscale using a combination of techniques based on atomic force microscopy. Polycrystalline and ...
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Estudo por espectroscopia Raman de efeitos de localização das excitações elementares em superredes e em ligas dopadas. 

Espinoza-Carrasco, Veronica Elsa (Universidade Federal de São Carlos, 2005-03-22)
In the present work, the localization properties of the single-particle and collective excitations subjected to a random potential in the AlGaAsSi alloys and in the intentionally disordered GaAs/AlGaAs:Si superlattices (SL ...
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Modelo de Anderson com repulsão coulombiana nos níveis que se acoplam com o ponto quântico 

Hostalácio, Alexandre Vilefort (Universidade Federal de São Carlos, 2019-12-20)
In this work, a study of the Anderson model is done for the case of a quantum dot between two electron gases, single-electron transistor (SET), where a Coulombian repulsion term was added at the orbitals that are directly ...
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