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Contraste entre propriedades optoeletrônicas em estruturas de tunelamento ressonante n-i-n baseadas em GaAs
(Universidade Federal de São Carlos, 2019-05-15)
Resonant Tunneling Diodes (RTDs) are semiconductor devices usually composed of two barrier structures embedding a single quantum well (QW) and highly doped layers in its extremities. Under an applied bias voltage, the ...
Visualização, caracterização e manipulação de paredes de domínios em filmes finos ferroelétricos
(Universidade Federal de São Carlos, 2017-08-10)
In this work, conductivity in ferroelectric domain walls, in materials whose domains are insulating, was investigated at the nanoscale using a combination of techniques based on atomic force microscopy. Polycrystalline and ...
Processamento convencional e assistido por campo elétrico (Flash Sintering) de cerâmicas livres de chumbo baseadas em K0,5Na0,5NbO3: propriedades físicas finais
(Universidade Federal de São Carlos, 2020-08-07)
K0,5Na0,5NbO3 (KNN)-based ceramics are considered promising candidates to replace lead-based piezoelectric ceramics, such as Pb(ZrxTi1−x)O3, which are widely used in electro electronic devices. However, obtaining KNN-based ...