Search
Now showing items 1-3 of 3
Propriedades eletrônicas de nanofios semicondutores de Fosfeto de Zinco (Zn3P2)
(Universidade Federal de São Carlos, 2018-04-20)
Zinc phosphide Zn3P2 nanowires with excellent crystalline quality were grown using the Vapor-Liquid-Solid (VLS) method with gold nanoparticles as catalysts. Single nanowire based devices were fabricated with ohmic nickel ...
Contraste entre propriedades optoeletrônicas em estruturas de tunelamento ressonante n-i-n baseadas em GaAs
(Universidade Federal de São Carlos, 2019-05-15)
Resonant Tunneling Diodes (RTDs) are semiconductor devices usually composed of two barrier structures embedding a single quantum well (QW) and highly doped layers in its extremities. Under an applied bias voltage, the ...
Carrier dynamics of low-dimensional semiconductors: from quantum wells and quantum dots to resonant tunneling devices
(Universidade Federal de São Carlos, 2021-07-22)
This thesis aims to study heterostructures and devices that play a fundamental role in modern nanoelectronic technologies, focusing on group III-V semiconductor materials, especially arsenide-based systems, for photodetection ...