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Contraste entre propriedades optoeletrônicas em estruturas de tunelamento ressonante n-i-n baseadas em GaAs
(Universidade Federal de São Carlos, 2019-05-15)
Resonant Tunneling Diodes (RTDs) are semiconductor devices usually composed of two barrier structures embedding a single quantum well (QW) and highly doped layers in its extremities. Under an applied bias voltage, the ...
Development of seminconductor nanowire materials for electronic and photonics applications
(Universidade Federal de São Carlos, 2019-12-05)
The thesis is concerned with study of GaAs nanowires fabricated on Si substrate.
The possibility of growing III-V semiconductor materials directly on silicon in the
form of nanowires is an attractive route to the integration ...