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Propriedades eletrônicas de nanofios semicondutores de Fosfeto de Zinco (Zn3P2)
(Universidade Federal de São Carlos, 2018-04-20)
Zinc phosphide Zn3P2 nanowires with excellent crystalline quality were grown using the Vapor-Liquid-Solid (VLS) method with gold nanoparticles as catalysts. Single nanowire based devices were fabricated with ohmic nickel ...
Propriedades de transporte eletrônico em filmes de diamante crescidos por deposição de vapores químicos
(Universidade Federal de São Carlos, 2007-02-27)
In this work it was investigated some fundamental properties of undoped and Borondoped
(p-type) synthetic diamond films. It was investigated the influence of the cleaning
process on the surface s quality in order to ...
Otimizando a eficiência de células solares baseadas em nanoestruturas semicondutoras quaternárias
(Universidade Federal de São Carlos, 2020-02-28)
Solar cells composed of semiconductor materials with gap energies and different structures, commonly known as Multijunction, have been the record holders for efficiency in converting solar to electric energy in recent ...
Montagem de um sistema de micro-PL em baixas temperaturas para o estudo de semicondutores bidimensionais
(Universidade Federal de São Carlos, 2020-02-28)
Transition metal dicalcogenides (TMDs) are materials that have been attracted great attention in recent years, both from the point of view of fundamental physics and for a new generation of optoelectronic and spintronic ...
Contraste entre propriedades optoeletrônicas em estruturas de tunelamento ressonante n-i-n baseadas em GaAs
(Universidade Federal de São Carlos, 2019-05-15)
Resonant Tunneling Diodes (RTDs) are semiconductor devices usually composed of two barrier structures embedding a single quantum well (QW) and highly doped layers in its extremities. Under an applied bias voltage, the ...
Caracterização ótica de poços quânticos de GaMnAs
(Universidade Federal de São Carlos, 2007-09-12)
In this work, we have studied GaAs/AlAs/Ga1-xMnxAs quantum wells (QWs) with low Mn concentration ( 0 < x < 0,2%). The samples were grown by Molecular Beam Epitaxy (MBE) in high temperature (450 C). The growth conditions ...
Efeitos de localização de portadores em poços quânticos de GaBiAs/GaAs
(Universidade Federal de São Carlos, 2015-08-04)
In order to investigate optical and spin properties of GaBiAs / GaAs quantum
wells, we performed both photoluminescence and magneto-photoluminescence
spectroscopy measurements in three samples: 10 nm quantum wells with ...
Development of seminconductor nanowire materials for electronic and photonics applications
(Universidade Federal de São Carlos, 2019-12-05)
The thesis is concerned with study of GaAs nanowires fabricated on Si substrate.
The possibility of growing III-V semiconductor materials directly on silicon in the
form of nanowires is an attractive route to the integration ...
Carrier dynamics of low-dimensional semiconductors: from quantum wells and quantum dots to resonant tunneling devices
(Universidade Federal de São Carlos, 2021-07-22)
This thesis aims to study heterostructures and devices that play a fundamental role in modern nanoelectronic technologies, focusing on group III-V semiconductor materials, especially arsenide-based systems, for photodetection ...
Filmes de diamante não-dopados e dopados: um estudo sistemático usando espectroscopia Raman
(Universidade Federal de São Carlos, 2004-11-17)
Diamond films grown by both hot filament (HFCVD) and microwave-plasma (MW-CVD) assisted chemical vapor deposition were investigated. Raman spectroscopy, scan-
ning electron microscopy and X-ray di¤raction were employed ...