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Magneto luminescência em diodos de tunelamento ressonante contendo pontos quânticos de InAs
(Universidade Federal de São Carlos, 2011-03-15)
In this work, we have studied the spin polarization of carriers in n-type resonant tunneling diodes (RTDs) of GaAs/AlGaAs which incorporates a single layer of InAs selfassembled quantum dots in the center of the GaAs quantum ...