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Contraste entre propriedades optoeletrônicas em estruturas de tunelamento ressonante n-i-n baseadas em GaAs
(Universidade Federal de São Carlos, 2019-05-15)
Resonant Tunneling Diodes (RTDs) are semiconductor devices usually composed of two barrier structures embedding a single quantum well (QW) and highly doped layers in its extremities. Under an applied bias voltage, the ...
Propriedades óticas e de transporte em heteroestruturas semicondutoras contendo GaMnAs
(Universidade Federal de São Carlos, 2011-10-14)
In this work, we have investigated Ga1-xMnxAs/GaAs/AlAs quantum wells (QWs) with low Mn concentration (x < 0.1%) grown by Molecular Beam Epitaxy at substrate temperatures of 400 and 450°C. We have investigated the time-resolved ...
Carrier dynamics of low-dimensional semiconductors: from quantum wells and quantum dots to resonant tunneling devices
(Universidade Federal de São Carlos, 2021-07-22)
This thesis aims to study heterostructures and devices that play a fundamental role in modern nanoelectronic technologies, focusing on group III-V semiconductor materials, especially arsenide-based systems, for photodetection ...
Filmes de diamante não-dopados e dopados: um estudo sistemático usando espectroscopia Raman
(Universidade Federal de São Carlos, 2004-11-17)
Diamond films grown by both hot filament (HFCVD) and microwave-plasma (MW-CVD) assisted chemical vapor deposition were investigated. Raman spectroscopy, scan-
ning electron microscopy and X-ray di¤raction were employed ...