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Propriedades eletrônicas de nanofios semicondutores de Fosfeto de Zinco (Zn3P2)
(Universidade Federal de São Carlos, 2018-04-20)
Zinc phosphide Zn3P2 nanowires with excellent crystalline quality were grown using the Vapor-Liquid-Solid (VLS) method with gold nanoparticles as catalysts. Single nanowire based devices were fabricated with ohmic nickel ...
Contraste entre propriedades optoeletrônicas em estruturas de tunelamento ressonante n-i-n baseadas em GaAs
(Universidade Federal de São Carlos, 2019-05-15)
Resonant Tunneling Diodes (RTDs) are semiconductor devices usually composed of two barrier structures embedding a single quantum well (QW) and highly doped layers in its extremities. Under an applied bias voltage, the ...
Propriedades óticas e de transporte em heteroestruturas semicondutoras contendo GaMnAs
(Universidade Federal de São Carlos, 2011-10-14)
In this work, we have investigated Ga1-xMnxAs/GaAs/AlAs quantum wells (QWs) with low Mn concentration (x < 0.1%) grown by Molecular Beam Epitaxy at substrate temperatures of 400 and 450°C. We have investigated the time-resolved ...