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Estudo por espectroscopia Raman de efeitos de localização das excitações elementares em superredes e em ligas dopadas.
(Universidade Federal de São Carlos, 2005-03-22)
In the present work, the localization properties of the single-particle and collective excitations subjected to a random potential in the AlGaAsSi alloys and in the intentionally disordered GaAs/AlGaAs:Si superlattices (SL ...
Filmes de diamante não-dopados e dopados: um estudo sistemático usando espectroscopia Raman
(Universidade Federal de São Carlos, 2004-11-17)
Diamond films grown by both hot filament (HFCVD) and microwave-plasma (MW-CVD) assisted chemical vapor deposition were investigated. Raman spectroscopy, scan-
ning electron microscopy and X-ray di¤raction were employed ...
O papel da interação elétron-elétron no regime Hall quântico interio.
(Universidade Federal de São Carlos, 2004-04-02)
Experimental and theoretical studies of the aspects of particle-like and collective behavior
of electrons in the proximity of the edges of two-dimensional (2DES) and quasi-one-dimensional
(Q1DES) systems, named quantum ...
Multiferróicos monofásicos a base de Pb(Fe2/3W1/3)O3-PbTiO3: acoplamento magnetoelétrico intrínseco
(Universidade Federal de São Carlos, 2010-11-25)
Multiferroic ceramic solid solutions between the ferroelectric relaxor Pb(Fe2/3W1/3)O3 (PFW) and normal ferroelectric PbTiO3 (PT) [PFW-PT] has been synthesized by a modified B-site precursor method and characterized by ...
Efeitos eletrônicos, elásticos e estruturais em sistemas semicondutores nanoscópicos
(Universidade Federal de São Carlos, 2012-02-16)
The present work aims the study of electronic, elastic and structural properties of a whole class of nanoscopic semiconductors systems, which include quasi-two-dimensional, one-dimensional and zero-dimensional confined ...
Propriedades óticas e de transporte em heteroestruturas semicondutoras contendo GaMnAs
(Universidade Federal de São Carlos, 2011-10-14)
In this work, we have investigated Ga1-xMnxAs/GaAs/AlAs quantum wells (QWs) with low Mn concentration (x < 0.1%) grown by Molecular Beam Epitaxy at substrate temperatures of 400 and 450°C. We have investigated the time-resolved ...