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Magneto luminescência em diodos de tunelamento ressonante contendo pontos quânticos de InAs
(Universidade Federal de São Carlos, 2011-03-15)
In this work, we have studied the spin polarization of carriers in n-type resonant tunneling diodes (RTDs) of GaAs/AlGaAs which incorporates a single layer of InAs selfassembled quantum dots in the center of the GaAs quantum ...
Estudos de efeitos de spin em diodos de tunelamento ressonante do tipo-p
(Universidade Federal de São Carlos, 2010-03-26)
The aim of this work was to complement the studies of the mechanisms of control of the degree of circular polarization of emission from resonant tunneling diodes p-type (RTD) by analyzing the optical properties and transport ...
Polarização de spin em heteroestruturas semicondutoras contendo pontos quânticos de InAs
(Universidade Federal de São Carlos, 2010-05-07)
In this work, we have studied spin polarization of carriers in a resonant tunneling diode GaAs/AlGaAs with InAs quantum dots in the center of the quantum well. We have observed that the photoluminescence of quantum dots ...