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Estudos por espectroscopia Raman da heteroestrutura semicondutora InxGa1-xP/GaAs.
(Universidade Federal de São Carlos, 2005-03-24)
In this work, the technique Raman spectroscopy is used in order to study
InxGa1-xP films grown with different thickness on GaAs (001). Two sets of samples grown
by CBE (Chemical Beam Epitaxy) were analized: the first a ...
Estudo por espalhamento Raman dos efeitos de desordem química e estrutural no espectro de fônos do InSb indentado
(Universidade Federal de São Carlos, 2004-07-20)
Caracterização ótica de poços quânticos de GaMnAs
(Universidade Federal de São Carlos, 2007-09-12)
In this work, we have studied GaAs/AlAs/Ga1-xMnxAs quantum wells (QWs) with low Mn concentration ( 0 < x < 0,2%). The samples were grown by Molecular Beam Epitaxy (MBE) in high temperature (450 C). The growth conditions ...
Propriedades de transporte eletrônico em filmes de diamante crescidos por deposição de vapores químicos
(Universidade Federal de São Carlos, 2007-02-27)
In this work it was investigated some fundamental properties of undoped and Borondoped
(p-type) synthetic diamond films. It was investigated the influence of the cleaning
process on the surface s quality in order to ...