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Propriedades eletrônicas de nanofios semicondutores de Fosfeto de Zinco (Zn3P2)
(Universidade Federal de São Carlos, 2018-04-20)
Zinc phosphide Zn3P2 nanowires with excellent crystalline quality were grown using the Vapor-Liquid-Solid (VLS) method with gold nanoparticles as catalysts. Single nanowire based devices were fabricated with ohmic nickel ...
Propriedades de transporte eletrônico em filmes de diamante crescidos por deposição de vapores químicos
(Universidade Federal de São Carlos, 2007-02-27)
In this work it was investigated some fundamental properties of undoped and Borondoped
(p-type) synthetic diamond films. It was investigated the influence of the cleaning
process on the surface s quality in order to ...
Otimizando a eficiência de células solares baseadas em nanoestruturas semicondutoras quaternárias
(Universidade Federal de São Carlos, 2020-02-28)
Solar cells composed of semiconductor materials with gap energies and different structures, commonly known as Multijunction, have been the record holders for efficiency in converting solar to electric energy in recent ...
Montagem de um sistema de micro-PL em baixas temperaturas para o estudo de semicondutores bidimensionais
(Universidade Federal de São Carlos, 2020-02-28)
Transition metal dicalcogenides (TMDs) are materials that have been attracted great attention in recent years, both from the point of view of fundamental physics and for a new generation of optoelectronic and spintronic ...
Caracterização ótica de poços quânticos de GaMnAs
(Universidade Federal de São Carlos, 2007-09-12)
In this work, we have studied GaAs/AlAs/Ga1-xMnxAs quantum wells (QWs) with low Mn concentration ( 0 < x < 0,2%). The samples were grown by Molecular Beam Epitaxy (MBE) in high temperature (450 C). The growth conditions ...
Efeitos de localização de portadores em poços quânticos de GaBiAs/GaAs
(Universidade Federal de São Carlos, 2015-08-04)
In order to investigate optical and spin properties of GaBiAs / GaAs quantum
wells, we performed both photoluminescence and magneto-photoluminescence
spectroscopy measurements in three samples: 10 nm quantum wells with ...
Estudo por espalhamento Raman dos efeitos de desordem química e estrutural no espectro de fônos do InSb indentado
(Universidade Federal de São Carlos, 2004-07-20)
Estudos por espectroscopia Raman da heteroestrutura semicondutora InxGa1-xP/GaAs.
(Universidade Federal de São Carlos, 2005-03-24)
In this work, the technique Raman spectroscopy is used in order to study
InxGa1-xP films grown with different thickness on GaAs (001). Two sets of samples grown
by CBE (Chemical Beam Epitaxy) were analized: the first a ...
Caracterização das propriedades ópticas e de spin de poços quânticos de InGaAsN/GaAs
(Universidade Federal de São Carlos, 2015-03-30)
In this work, it was investigated the optical and magneto-optical properties of In- GaAsN/GaAs and InGaAs/GaAs double quantum wells. It was performed a systematic experimental study of photoluminescence (PL) as a function ...
Nanofios de Ge : síntese e dispositivos
(Universidade Federal de São Carlos, 2012-03-06)
Abstract In this work, germanium nanowires' based devices were studied and developed and the influence of natural disorder on the electronic properties of these structures was also investigated. Parameters related to the ...