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Magneto luminescência em diodos de tunelamento ressonante contendo pontos quânticos de InAs
(Universidade Federal de São Carlos, 2011-03-15)
In this work, we have studied the spin polarization of carriers in n-type resonant tunneling diodes (RTDs) of GaAs/AlGaAs which incorporates a single layer of InAs selfassembled quantum dots in the center of the GaAs quantum ...
Estudos de efeitos de spin em diodos de tunelamento ressonante do tipo-p
(Universidade Federal de São Carlos, 2010-03-26)
The aim of this work was to complement the studies of the mechanisms of control of the degree of circular polarization of emission from resonant tunneling diodes p-type (RTD) by analyzing the optical properties and transport ...
Polarização de spin em heteroestruturas semicondutoras contendo pontos quânticos de InAs
(Universidade Federal de São Carlos, 2010-05-07)
In this work, we have studied spin polarization of carriers in a resonant tunneling diode GaAs/AlGaAs with InAs quantum dots in the center of the quantum well. We have observed that the photoluminescence of quantum dots ...
Efeitos de spin em diodos de tunelamento ressonante não-magnéticos tipo-n
(Universidade Federal de São Carlos, 2007-02-27)
In this work, we have investigated spin polarization effects in asymmetric ntype
resonant tunneling diodes (RTDs). When subjected to an external magnetic field parallel
to the tunnel current, the Zeeman effect leads to the ...