Search
Now showing items 1-10 of 13
Contraste entre propriedades optoeletrônicas em estruturas de tunelamento ressonante n-i-n baseadas em GaAs
(Universidade Federal de São Carlos, 2019-05-15)
Resonant Tunneling Diodes (RTDs) are semiconductor devices usually composed of two barrier structures embedding a single quantum well (QW) and highly doped layers in its extremities. Under an applied bias voltage, the ...
Modelagem computacional de estruturas de poços quânticos semicondutores para dispositivos optoeletrônicos e spintrônicos
(Universidade Federal de São Carlos, 2014-01-29)
In the present thesis, we realize a computational modeling of semiconductor structures based on multiple quantum wells with filter barriers and on quantum wells with semiconductor diluted magnetic layers. We numerically ...
Contribuições ao estudo do transporte eletrônico em nanofios semicondutores : localização e estados de interface
(Universidade Federal de São Carlos, 2013-04-11)
In this work, we studied the influence of surface charges on the properties (especially electronic transport) of semiconductor nanowires and nanobelts via computer simulations and also they were compared to experimental ...
Optical and transport properties of p-i-n GaAs/AlAs resonant tunneling diode
(Universidade Federal de São Carlos, 2014-05-26)
In this thesis, we have investigated the optical and transport properties of a p-i-n GaAs-AlAs resonant tunneling diode (RTD). The possibility of controlling and significantly varying the density of carriers accumulated ...
Efeito Aharonov-Bohm em partículas neutras
(Universidade Federal de São Carlos, 2011-03-14)
In classical Physics, the motion of an electrically charged particle is affected only by the presence of a magnetic field if the particle enters a region of space in which the field is present. Meanwhile, in quantum Physics, ...
Manipulação de spin em diodos de tunelamento ressonante não-magnéticos tipo-n
(Universidade Federal de São Carlos, 2010-04-01)
The aim of this work was to study the spin effects in non-magnetic asymmetric n-type resonant tunneling diodes (RTD). For this purpose, we have used transport and polarization resolved magneto-photoluminescence measurement ...
Caracterização das propriedades ópticas e de spin de poços quânticos de InGaAsN/GaAs
(Universidade Federal de São Carlos, 2015-03-30)
In this work, it was investigated the optical and magneto-optical properties of In- GaAsN/GaAs and InGaAs/GaAs double quantum wells. It was performed a systematic experimental study of photoluminescence (PL) as a function ...
Propriedades eletrônicas de nanofios semicondutores de Fosfeto de Zinco (Zn3P2)
(Universidade Federal de São Carlos, 2018-04-20)
Zinc phosphide Zn3P2 nanowires with excellent crystalline quality were grown using the Vapor-Liquid-Solid (VLS) method with gold nanoparticles as catalysts. Single nanowire based devices were fabricated with ohmic nickel ...
Efeitos de localização de portadores em poços quânticos de GaBiAs/GaAs
(Universidade Federal de São Carlos, 2015-08-04)
In order to investigate optical and spin properties of GaBiAs / GaAs quantum
wells, we performed both photoluminescence and magneto-photoluminescence
spectroscopy measurements in three samples: 10 nm quantum wells with ...
Propriedades óticas e de transporte em heteroestruturas semicondutoras contendo GaMnAs
(Universidade Federal de São Carlos, 2011-10-14)
In this work, we have investigated Ga1-xMnxAs/GaAs/AlAs quantum wells (QWs) with low Mn concentration (x < 0.1%) grown by Molecular Beam Epitaxy at substrate temperatures of 400 and 450°C. We have investigated the time-resolved ...