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Efeitos de localização de portadores em poços quânticos de GaBiAs/GaAs
(Universidade Federal de São Carlos, 2015-08-04)
In order to investigate optical and spin properties of GaBiAs / GaAs quantum
wells, we performed both photoluminescence and magneto-photoluminescence
spectroscopy measurements in three samples: 10 nm quantum wells with ...
Engenharia de defeitos em semicondutores de gap largo
(Universidade Federal de São Carlos, 2015-12-14)
Defects play a fundamental issue on physical properties of wide bandgap semiconductors
(WBS) due to the possibility of application in high temperature. This work shows the features of the defects in di erent kind of WBS ...
Estudos por espectroscopia Raman da heteroestrutura semicondutora InxGa1-xP/GaAs.
(Universidade Federal de São Carlos, 2005-03-24)
In this work, the technique Raman spectroscopy is used in order to study
InxGa1-xP films grown with different thickness on GaAs (001). Two sets of samples grown
by CBE (Chemical Beam Epitaxy) were analized: the first a ...
Estudos de propriedades de muitos corpos em sistemas confinados : simulacões via Monte Carlo Quântico
(Universidade Federal de São Carlos, 2009-08-28)
The Quantum Monte Carlo Method has been constituted in a powerful ab-initio tool which can afford accurate estimates of the ground-state properties of quantum many-body systems. With this subject in mind, we first present ...
Estudo por espalhamento Raman dos efeitos de desordem química e estrutural no espectro de fônos do InSb indentado
(Universidade Federal de São Carlos, 2004-07-20)
Propriedades eletrônicas de nanofios semicondutores de Fosfeto de Zinco (Zn3P2)
(Universidade Federal de São Carlos, 2018-04-20)
Zinc phosphide Zn3P2 nanowires with excellent crystalline quality were grown using the Vapor-Liquid-Solid (VLS) method with gold nanoparticles as catalysts. Single nanowire based devices were fabricated with ohmic nickel ...
Contraste entre propriedades optoeletrônicas em estruturas de tunelamento ressonante n-i-n baseadas em GaAs
(Universidade Federal de São Carlos, 2019-05-15)
Resonant Tunneling Diodes (RTDs) are semiconductor devices usually composed of two barrier structures embedding a single quantum well (QW) and highly doped layers in its extremities. Under an applied bias voltage, the ...
Propriedades óticas e de transporte em heteroestruturas semicondutoras contendo GaMnAs
(Universidade Federal de São Carlos, 2011-10-14)
In this work, we have investigated Ga1-xMnxAs/GaAs/AlAs quantum wells (QWs) with low Mn concentration (x < 0.1%) grown by Molecular Beam Epitaxy at substrate temperatures of 400 and 450°C. We have investigated the time-resolved ...
Nanofios de Ge : síntese e dispositivos
(Universidade Federal de São Carlos, 2012-03-06)
Abstract In this work, germanium nanowires' based devices were studied and developed and the influence of natural disorder on the electronic properties of these structures was also investigated. Parameters related to the ...
Optical and transport properties of p-i-n GaAs/AlAs resonant tunneling diode
(Universidade Federal de São Carlos, 2014-05-26)
In this thesis, we have investigated the optical and transport properties of a p-i-n GaAs-AlAs resonant tunneling diode (RTD). The possibility of controlling and significantly varying the density of carriers accumulated ...